收藏本站
参数资料
型号： AUIRF1404ZS
元件分类： JFETs
英文描述： 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装： ROHS COMPLIANT, D2PAK-3
文件页数： 8/15页
文件大小： 362K
代理商： AUIRF1404ZS
AUIRF1404Z/S/L
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.11mH
RG = 25, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
This value is determined from sample failure
population, starting TJ = 25°C, L = 0.11mH, RG =
25
, IAS = 75A, VGS =10V.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
TO-220 device will have an Rth value of 0.65°C/W.
Rθ is measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 160A. Note
that current limitations arising from heating of the device leads
may occur with some lead mounting arrangements.
(Refer to AN-
1140) http://www.irf.com/technical-info/appnotes/an-1140.pdf
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage40
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.033
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.7
3.7
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
170
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
100
150
Qgs
Gate-to-Source Charge
–––
31
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
–––
td(on)
Turn-On Delay Time
–––18–––
tr
Rise Time
–––
110
–––
td(off)
Turn-Off Delay Time
–––36–––
ns
tf
Fall Time
–––58–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
4340
–––
Coss
Output Capacitance
–––
1030
–––
Crss
Reverse Transfer Capacitance
–––
550
–––
pF
Coss
Output Capacitance
–––
3300
–––
Coss
Output Capacitance
–––
920
–––
Coss eff.
Effective Output Capacitance
–––
1350
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
160
(Body Diode)
A
ISM
Pulsed Source Current
–––
750
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
34
51
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V, ID = 75A
ID = 75A
VDS = 32V
Conditions
VGS = 10V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V e
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A e
VDS = VGS, ID = 250A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 32V, = 1.0MHz
VGS = 0V, VDS = 0V to 32V
f
VGS = 10V
e
VDD = 20V
ID = 75A
RG = 3.0
相关PDF资料
PDF描述
AUIRF1404 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF1405ZSTRL 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1405ZSTRR 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1405ZS 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1405ZL 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
相关代理商/技术参数
参数描述
AUIRF1404ZSTRL 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF1404ZSTRR 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF1405 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF1405 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-22
AUIRF1405ZL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*