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参数资料
| 型号： | AUIRF1404 |
| 元件分类： | JFETs |
| 英文描述： | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 212K |
| 代理商： | AUIRF1404 |
AUIRF1404
HEXFET Power MOSFET
06/17/11
www.irf.com
1
PD-97684
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified*
AUTOMOTIVE GRADE
S
D
G
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF1404
S
D
G
D
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
i
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
1.5
620
See Fig. 12a, 12b, 15, 16
333
2.2
± 20
Max.
202
h
143
808
160
-55 to + 175
300
10 lbf
yin (1.1Nym)
V(BR)DSS
40V
RDS(on) typ.
3.5mΩ
max
4.0mΩ
ID (Silicon Limited)
202A
h
ID (Package Limited)
160A
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| AUIRF1405ZSTRL | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZSTRR | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZS | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZL | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF1404 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 160A TO-2 |
| AUIRF1404S | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1404S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 75A TO-26 |
| AUIRF1404STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1404STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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