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参数资料
| 型号： | AUIRF1404 |
| 元件分类： | JFETs |
| 英文描述： | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 212K |
| 代理商： | AUIRF1404 |
AUIRF1404
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
50
100
150
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
G
at
e-
to-
S
our
ce
V
ol
tage
(
V
)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
121A
V
= 20V
DS
V
= 32V
DS
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
,Source-to-Drain Voltage (V)
I
,Rever
se
Dr
ai
nCur
rent
(
A
)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 175 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,Dr
ai
nCur
rent
(
A
)
I
,Dr
ai
nCur
rent
(
A
)
DS
D
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C
,
C
ap
ac
ita
nc
e(
pF
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs+ Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF1405ZSTRL | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZSTRR | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZS | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZL | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF1404 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 160A TO-2 |
| AUIRF1404S | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1404S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 75A TO-26 |
| AUIRF1404STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1404STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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