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参数资料
| 型号： | AUIRF1404 |
| 元件分类： | JFETs |
| 英文描述： | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 212K |
| 代理商： | AUIRF1404 |
AUIRF1404
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 85μH
RG = 25
Ω, IAS = 121A. (See Figure 12)
ISD ≤ 121A, di/dt ≤ 130A/μs, VDD ≤
V(BR)DSS, TJ
≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 160A.
Rθ is measured at TJ of approximately 90°C.
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.039
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.5
4.0
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
76
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
131
196
Qgs
Gate-to-Source Charge
–––
36
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
37
56
td(on)
Turn-On Delay Time
–––
17
–––
tr
Rise Time
–––
190
–––
td(off)
Turn-Off Delay Time
–––
46
–––
ns
tf
Fall Time
–––
33
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
5669
–––
Coss
Output Capacitance
–––
1659
–––
pF
Crss
Reverse Transfer Capacitance
–––
223
–––
Coss
Output Capacitance
–––
6205
–––
Coss
Output Capacitance
–––
1467
–––
Coss eff.
Effective Output Capacitance
g
–––
2249
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
202
h
(Body Diode)
A
ISM
Pulsed Source Current
–––
808
(Body Diode)
VSD
Diode Forward Voltage
–––
1.5
V
trr
Reverse Recovery Time
–––
78
117
ns
Qrr
Reverse Recovery Charge
–––
163
245
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VDS = 25V, ID = 121A
ID = 121A
VDS = 32V
VGS = 20V
VGS = -20V
VGS = 10V f
VDS = VGS, ID = 250μA
VDS = 400V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
MOSFET symbol
VDD = 20V
ID = 121A
RG = 2.5
Ω
Conditions
RD = 0.2
Ω
VGS = 0V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 121A f
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
TJ = 25°C, IF = 121A
di/dt = 100A/μs
f
TJ = 25°C, IS = 121A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VGS = 0V, VDS = 32V, = 1.0MHz
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相关代理商/技术参数 |
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| AUIRF1404 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 160A TO-2 |
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| AUIRF1404STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF1404STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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