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参数资料
| 型号： | AUIRF3004WL |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 230K |
| 代理商： | AUIRF3004WL |
05/13/11
www.irf.com
1
HEXFET Power MOSFET
AUIRF3004WL
GD
S
Gate
Drain
Source
Description
Specifically design for automotive applications this Widelead TO-
262 package part has the advantage of having over 50% lower
lead resistance and delivering over 20% lower Rds(on) when
compared with a traditional TO-262 package housing the same
silicon die. This greatly helps in reducing condition losses, achieving
higher current levels or enabling a system to run cooler and have
improved efficiency. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in
Automotive and other applications.
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 50% Lower Lead Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
PD - 97677
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
TO-262 WideLead
G
D
S
V(BR)DSS
40V
RDS(on) typ.
1.27mΩ
max.
1.40mΩ
ID (Silicon Limited)
386A c
ID (Package Limited)
240A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.40
°C/W
375
6.1
-55 to + 175
± 20
2.5
Max.
386
273
1544
240
A
°C
300 (1.6mm from case)
470
See Fig. 14, 15, 22a, 22b,
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF3004WL | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 240A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 40V, 240A, TO-2 |
| AUIRF3007 | 功能描述:MOSFET 75V 80A 12.6mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3205 | 功能描述:MOSFET 55V, 98A, 8mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3205Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3205ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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