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参数资料
| 型号： | AUIRF3004WL |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 230K |
| 代理商： | AUIRF3004WL |
AUIRF3004WL
www.irf.com
7
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Inductor Current
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
VDD
VDS
LD
D.U.T
+
-
Second Pulse Width < 1μs
Duty Factor < 0.1%
tp
V(BR)DSS
IAS
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
VDS
VGS
90%
10%
td(off)
td(on)
tf
tr
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF3004WL | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 240A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 40V, 240A, TO-2 |
| AUIRF3007 | 功能描述:MOSFET 75V 80A 12.6mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3205 | 功能描述:MOSFET 55V, 98A, 8mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3205Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3205ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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