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参数资料
| 型号： | AUIRF3004WL |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 230K |
| 代理商： | AUIRF3004WL |
AUIRF3004WL
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140
http://www.irf.com/technical-info/appnotes/an-1140.pdf
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.018mH
RG = 50Ω, IAS = 232A, VGS =10V. Part not recommended for use
above this value.
S
D
G
ISD ≤ 232A, di/dt ≤ 907A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.038 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.27
1.40
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
330
–––
S
RG
Internal Gate Resistance
–––
2.7
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
140
210
Qgs
Gate-to-Source Charge
–––
53
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
49
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
91
–––
td(on)
Turn-On Delay Time
–––
19
–––
tr
Rise Time
–––
220
–––
td(off)
Turn-Off Delay Time
–––
90
–––
tf
Fall Time
–––
130
–––
Ciss
Input Capacitance
–––
9450
–––
Coss
Output Capacitance
–––
1930
–––
Crss
Reverse Transfer Capacitance
–––
975
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 2330 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
2815
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 386
(Body Diode)
ISM
Pulsed Source Current
–––
1544
(Body Diode)d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
41
62
TJ = 25°C
VR = 34V,
–––
51
77
TJ = 125°C
IF = 232A
Qrr
Reverse Recovery Charge
–––
62
93
TJ = 25°C
di/dt = 100A/μs g
–––
99
149
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.3
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 232A
RG = 2.7Ω
VGS = 10V g
VDD = 26V
ID = 232A, VDS =0V, VGS = 10V g
TJ = 25°C, IS = 195A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA g
VGS = 10V, ID = 195A g
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS =20V
Conditions
VGS = 10V g
VGS = 0V
VDS = 32V
= 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 32V i, See Fig.11
VGS = 0V, VDS = 0V to 32V h
Conditions
VDS = 10V, ID = 195A
ID = 232A
VGS = 20V
VGS = -20V
nA
μA
nC
ns
pF
A
ns
nC
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