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参数资料
| 型号： | AUIRF3004WL |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 230K |
| 代理商： | AUIRF3004WL |
AUIRF3004WL
6
www.irf.com
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figure 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7.
ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3BVIav) =
DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
Fig 16. Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 232A
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(t
h)
,G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 250μA
ID = 1.0mA
ID = 1.0A
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| AUIRF3205ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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