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参数资料
| 型号： | AUIRF7669L2TR |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 100 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 |
| 文件页数： | 1/11页 |
| 文件大小： | 243K |
| 代理商： | AUIRF7669L2TR |
Description
The AUIRF7669L2TR(1) combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET
Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
www.irf.com
1
06/27/11
AUIRF7669L2TR
AUIRF7669L2TR1
AUTOMOTIVE GRADE
DirectFET
ISOMETRIC
L8
HEXFET is a registered trademark of International Rectifier.
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead free, RoHS and Halogen free
SB
SC
M2
M4
L4
L6
L8
V(BR)DSS
100V
RDS(on) typ.
3.5m
Ω
max.
4.4m
Ω
ID (Silicon Limited)
114A
Qg
81nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
f
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
g
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
45
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
°C/W
RθJCan
Junction-to-Can
fl
–––
1.2
RθJ-PCB
Junction-to-PCB Mounted
–––
0.5
Linear Derating Factor
f
W/°C
± 20
375
0.83
19
100
W
3.3
260
°C
-55 to + 175
Max.
114
81
460
850
260
See Fig.12a, 12b, 15, 16
100
PD - 97536A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF7669L2TR 1 | 制造商:International Rectifier 功能描述:AUIRF7669L2TR1 - MOSFET,,N CH,100V,375A,DIRECTFET,L8 |
| AUIRF7669L2TR1 | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7675M2TR | 功能描述:MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7675M2TR1 | 功能描述:MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7732S2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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