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参数资料
| 型号： | AUIRF7669L2TR |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 100 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 |
| 文件页数： | 4/11页 |
| 文件大小： | 243K |
| 代理商： | AUIRF7669L2TR |
AUIRF7669L2TR/TR1
2
www.irf.com
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 10
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.08
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.5
4.4
m
Ω
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-13
–––
mV/°C
gfs
Forward Transconductance
90
–––
S
RG
Gate Resistance
–––
1.5
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
5.0
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
Qg
Total Gate Charge
–––
81
120
Qgs1
Pre-Vth Gate-to-Source Charge
–––
23
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
6.8
–––
nC
See Fig. 11
Qgd
Gate-to-Drain ("Miller") Charge
–––
34
–––
Qgodr
Gate Charge Overdrive
–––
17.2
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
40.8
–––
Qoss
Output Charge
–––
46
–––
nC
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––
30
–––
ns
td(off)
Turn-Off Delay Time
–––
27
–––
tf
Fall Time
–––
14
–––
Ciss
Input Capacitance
–––
5660
–––
Coss
Output Capacitance
–––
1140
–––
Crss
Reverse Transfer Capacitance
–––
240
–––
pF
Coss
Output Capacitance
–––
9250
–––
Coss
Output Capacitance
–––
660
–––
Coss eff.
Effective Output Capacitance
–––
1040
–––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
–––
114
(Body Diode)
A
ISM
Pulsed Source Current
–––
460
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
61
92
ns
Qrr
Reverse Recovery Charge
–––
140
210
nC
p-n junction diode.
MOSFET symbol
Conditions
VGS = 0V
VDS = 25V
VDS = 25V, ID = 68A
showing the
integral reverse
VDS = 50V, VGS = 10V
VGS = 20V
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
Conditions
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 68A i
VDS = VGS, ID = 250μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = -20V
IF = 68A, VDD = 50V
di/dt = 100A/μs
i
IS = 68A, VGS = 0V i
ID = 68A
VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
i
ID = 68A
RG = 1.8
Ω
= 1.0MHz
VGS = 0V, VDS = 0V to 80V
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