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| 型号： | AUIRLR024NTR |
| 厂商： | International Rectifier |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 17A DPAK |
| 标准包装： | 2,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 25V |
| 功率 - 最大： | 45W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
AUIRLR/U024N
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
–––
0.061
–––
–––
0.065
V/°C Reference to 25°C, I D = 1mA
V GS = 10V, I D = 10A
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.080
?
V GS = 5.0V, I D = 10A
–––
–––
0.110
V GS = 4.0V, I D = 9.0A
V GS(th)
gfs
I DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
1.0
8.3
–––
–––
–––
–––
2.0
–––
25
V
S
μA
V DS = V GS , I D = 250μA
V DS = 25V, I D = 11A
V DS = 55V, V GS = 0V
–––
–––
250
V DS = 44V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
V GS = 16V
V GS = -16V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Q g
Total Gate Charge
–––
–––
15
I D = 11A
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
7.1
74
20
29
3.7
8.5
–––
–––
–––
–––
nC
ns
V DS = 44V
V GS = 5.0V,See Fig 6 and 13
V DD = 28V
I D = 11A
R G = 12 ?, V GS = 5.0V
R D = 2.4 ?, See Fig.10
L D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
D
L S
C iss
C oss
C rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
7.5
480
130
61
–––
–––
–––
–––
pF
from package
and center of die contact
V GS = 0V
V DS = 25V
? = 1.0MHz, See Fig.5
G
S
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
I S
Continuous Source Current
(Body Diode)
–––
–––
17
A
MOSFET symbol
showing the
D
I SM
Pulsed Source Current
(Body Diode)
–––
–––
72
integral reverse
p-n junction diode.
G
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
60
130
1.3
90
200
V
ns
nC
T J = 25°C, I S = 11A, V GS = 0V
T J = 25°C, I F = 11A
di/dt = 100A/μs
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
?
?
?
?
?
?
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V DD = 25V, starting T J = 25°C, L = 790μH, R G = 25 ? , I AS = 11A. (See Figure 12)
I SD ≤ 11A, di/dt ≤ 290A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%
This is applied for I-PAK, L S of D-PAK is measured between lead and center of die contact .
Uses IRLZ24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
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