参数资料
型号: AUIRLR3410
厂商: International Rectifier
文件页数: 1/12页
文件大小: 0K
描述: MOSFET N-CH 100V 17A DPAK
标准包装: 75
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 17A
开态Rds(最大)@ Id, Vgs @ 25° C: 105 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 34nC @ 5V
输入电容 (Ciss) @ Vds: 800pF @ 25V
功率 - 最大: 79W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 管件
AUTOMOTIVE GRADE
AUIRLR3410
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
D
HEXFET ? Power MOSFET
V (BR)DSS 100V
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
G
S
R DS(on) max.
I D
D
105m Ω
17A
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET? Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
S
G
D-Pak
AUIRLR3410
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
G
Gate
D
Drain
S
Source
and a wide variety of other applications.
Base Part Number
AUIRLR3410
Package Type
D-pak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
Orderable Part Number
AUIRLR3410
AUIRLR3410TR
AUIRLR3410TRL
AUIRLR3410TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A ) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
17
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
12
60
79
0.53
± 16
150
9.0
7.9
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
-55 to + 175
300
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.9
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
–––
–––
50
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
* Qualification standards can be found at http://www.irf.com/
1
www.irf.com ? 2014 International Rectifier Submit Datasheet Feedback
March 17, 2014
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