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| 型号： | AUIRLR3410 |
| 厂商： | International Rectifier |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 17A DPAK |
| 标准包装： | 75 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 105 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 800pF @ 25V |
| 功率 - 最大： | 79W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
AUIRLR3410
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
V GS = 0V, I D = 250 μ A
Δ V (BR)DSS / Δ T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
–––
0.122
–––
–––
–––
–––
0.105
0.125
0.155
V/°C Reference to 25°C, I D = 1mA
Ω
V GS = 10V, I D = 10A
V GS = 5.0V, I D = 10A
V GS = 4.0V, I D = 9.0A
V GS(th)
gfs
I DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
1.0
7.7
–––
–––
–––
–––
2.0
–––
25
V
S
μ A
V DS = V GS , I D = 250 μ A
V DS = 25V, I D = 9.0A
V DS = 100V, V GS = 0V
–––
–––
250
V DS = 80V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
V GS = 16V
V GS = -16V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q g
Total Gate Charge
–––
–––
34
I D = 9.0A
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
7.2
53
30
26
4.8
20
–––
–––
–––
–––
nC
ns
V DS = 80V
V GS = 5.0V
V DD = 50V
I D = 9.0A
R G = 6.0 Ω
V GS = 5.0V
L D
Internal Drain Inductance
–––
4.5
–––
Between lead,
D
L S
C iss
C oss
C rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
7.5
800
160
90
–––
–––
–––
–––
nH
pF
6mm (0.25in.)
from package
and center of die contact
V GS = 0V
V DS = 25V
? = 1.0MHz
G
S
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
17
MOSFET symbol
D
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
60
integral reverse
G
(Body Diode)
p-n junction diode.
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
140
740
1.3
210
1100
V
ns
nC
T J = 25°C, I S = 9.0A, V GS = 0V
T J = 25°C, I F = 9.0A
di/dt = 100A/ μ s
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig.11 )
? V DD = 25V, starting T J = 25°C, L = 3.1mH
R G = 25 Ω , I AS = 9.0A. (See Figure 12)
? I SD ≤ 9.0A, di/dt ≤ 540A/ μ s, V DD ≤ V (BR)DSS , T J ≤ 175°C
? Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
? Uses IRL530N data and test conditions.
? This is applied for L S of D-PAK is measured between
lead and center of die contact
? When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
? R θ is measured at Tj approximately 90°C.
2
www.irf.com ? 2014 International Rectifier
Submit Datasheet Feedback
March 17, 2014
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