- 您现在的位置：买卖IC网 > PDF目录373007 > BAS216 (NXP SEMICONDUCTORS) High-speed switching diode PDF资料下载
参数资料
| 型号： | BAS216 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | High-speed switching diode |
| 中文描述： | 0.25 A, 85 V, SILICON, SIGNAL DIODE |
| 封装： | CERAMIC PACKAGE-2 |
| 文件页数： | 2/12页 |
| 文件大小： | 59K |
| 代理商： | BAS216 |
1999 Apr 22
2
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
FEATURES
Small ceramic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular ceramic SMD
SOD110 package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM139
k
a
cathode mark
top view
side view
bottom view
k
Marking code:
A6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
85
75
250
500
V
V
mA
mA
note 1
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 1 ms
t = 1 s
T
amb
= 25
°
C; see Fig.2; note 1
65
4
1
0.5
400
+150
150
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
相关PDF资料 |
PDF描述 |
|---|---|
| BAS4 | Low-leakage diode |
| BAS4 | Schottky Diodes |
| BAS55 | High-speed diode |
| BAS678 | High-speed diode |
| BASFPSERIES | Regulators LSIs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS216 /T3 | 功能描述:二极管 - 通用，功率，开关 DIODE SW TAPE-11 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS216,115 | 功能描述:二极管 - 通用，功率，开关 DIODE SW TAPE-7 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS216,135 | 功能描述:二极管 - 通用，功率，开关 DIODE SW TAPE-11 RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS216 | 制造商:NXP Semiconductors 功能描述:DIODE SWITCHING SOD-110 |
| BAS216.115 | 制造商:NXP Semiconductors 功能描述:DIODE SWITCHING REEL 3K |
发布紧急采购，3分钟左右您将得到回复。