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参数资料
| 型号： | BBS3002-DL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 100A SMP-FD |
| 标准包装： | 1,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.8 毫欧 @ 50A，10V |
| 闸电荷(Qg) @ Vgs： | 280nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 13200pF @ 20V |
| 功率 - 最大： | 90W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | SMP-FD |
| 包装： | 带卷 (TR) |
Ordering number : ENA1357C
BBS3002
P-Channel Power MOSFET
–60V, –100A, 5.8m Ω , TO-263-2L/TO-263
http://onsemi.com
ON-resistance RDS(on)1=4.4m Ω (typ.)
Features
?
Input capacitance Ciss=13200pF (typ.)
?
?
4V drive
TO-263
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--60
±20
--100
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25°C
--400
90
150
--55 to +150
340
--60
A
W
°C
°C
mJ
A
Note : * 1 VDD=--30V, L=100 μ H, IAV=--60A (Fig.1)
* 2 L ≤ 100 μ H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
--60
--1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
VDS=--10V, ID=--50A
--1.2
54
90
--2.6
V
S
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--50A, VGS=--10V
ID=--50A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--100A
IS=--100A, VGS=0V
4.4
6.4
13200
1300
950
95
1000
800
820
280
50
55
--1.0
5.8
9.0
--1.5
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
91113 TKIM TC-00002965/60612 TKIM/12512 TKIM TC-00002684/ No. A1357-1/6
N1208QA MSIM TC-00001708
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