参数资料
型号: BC857T/R
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, SST3, SMD, 3 PIN
文件页数: 3/10页
文件大小: 158K
代理商: BC857T/R
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
Note
1.
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
PINNING
TYPE NUMBER
MARKING CODE(1)
BC856
3D*
BC856A
3A*
BC856B
3B*
BC857
3H*
BC857A
3E*
BC857B
3F*
BC857C
3G*
BC858B
3K*
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BC856
plastic surface mounted package; 3 leads
SOT23
BC857
plastic surface mounted package; 3 leads
SOT23
BC858
plastic surface mounted package; 3 leads
SOT23
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相关代理商/技术参数
参数描述
BC857U 制造商:KODENSHI 制造商全称:KODENSHI KOREA CORP. 功能描述:General purpose application
BC857UF 制造商:AUK 制造商全称:AUK corp 功能描述:PNP Silicon Transistor (General purpose application Switching application)
BC857W 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PNP general purpose transistors
BC857W /T3 功能描述:两极晶体管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
BC857W T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2