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参数资料
| 型号： | BC857T/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, SST3, SMD, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 158K |
| 代理商： | BC857T/R |
2004 Jan 16
6
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT715
102
101
1
10
102
103
IC (mA)
(1)
(2)
(3)
Fig.6
DC current gain as a function of collector
current; typical values.
BC857B; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT716
102
101
1
10
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
BC857B; VCE = 5 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT717
101
1
10
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT718
101
1
10
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9
Base-emitter saturation voltage as a
function of collector current; typical values.
BC857B; IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BC857U | 制造商:KODENSHI 制造商全称:KODENSHI KOREA CORP. 功能描述:General purpose application |
| BC857UF | 制造商:AUK 制造商全称:AUK corp 功能描述:PNP Silicon Transistor (General purpose application Switching application) |
| BC857W | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PNP general purpose transistors |
| BC857W /T3 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC857W T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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