参数资料
| 型号： | BD3506F-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ 2.5A 8SOIC |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 0.65 V ~ 2.5 V |
| 输入电压： | 1.2 V ~ 4.5 V |
| 电压 - 压降（标准）： | 0.12V @ 1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 2.5A（最小） |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
BD3506F,BD3506EFV
Technical Note
● About heat loss
In designing heat, operate the apparatus within the following conditions.
(Because the following temperatures are warranted temperature, be sure to take margin, etc. into account.)
1. Ambient temperature Ta shall be not more than 100°C.
2. Chip junction temperature Tj shall be not more than 150°C.
Chip junction temperature Tj can be considered under the following two cases.
① Chip junction temperature Tj is found from
IC surface temperature TC under actual
application conditions:
Tj=TC+ θ j-c × W
② Chip junction temperature Tj is found from ambient temperature Ta:
Tj=Ta+ θ j-a × W
＜ Reference value ＞
86.2 ℃ /W (substrate surface copper foil area:15 × 15mm )
54.3 ℃ /W (substrate surface copper foil area: 70 × 70mm )
39.1 ℃ /W (substrate surface copper foil area: 70 × 70mm )
＜ Reference value ＞
θ j-c:SOP8 41.0 ℃ /W
HTSSOP-B20 45.0 ℃ /W
Substrate size:70 × 70 × 1.6mm
(Substrate surface capper
foil area:less3%)
θ j-a:HTSSOP-B20 125.0 ℃ /W
86.2 ℃ /W
54.3 ℃ /W
39.1 ℃ /W
θ j-a:SOP8 222.0 ℃ /W (IC only)
181.0 ℃ /W Single-layer substrate
(substrate surface copper foil area: less 3%)
Single-layer substrate
θ j-a:HTSSOP-B20 125.0 ℃ /W (substrate surface copper foil area: less 3%))
2nd-layer
2nd-layer
4th-layer
2
2
2
Substrate size 70 × 70 × 1.6mm (thermal vias in the board.)
3
Most of heat loss in BD3506F/EFV occurs at the output Nch FET. The power lost is determined by multiplying the voltage
between VIN and Vo by the output current. Confirm voltage and output current conditions of VIN and Vo used, and
collate them with the thermal derating characteristics.
Because BD3506EFV employs the power PKG, the thermal
derating characteristics significantly vary in accord with the pc board conditions. When designing, care must be taken to
the size of a pc board to be used.
Power dissipation (W) = {Input voltage (VIN) – Output voltage (V0 ≒ VREF)}×Io (averaged)
Ex.)
If VIN = 1.8 volts, V0=1.2 volts, and Io (averaged)=1.5 A, the power dissipation is given by the following:
Power dissipation (W) =(1.8 volts – 1.2 volts) × 1.5 (A)
= 0.9 W
● Equivalent Circuit
Vcc
Vcc
NRCS
1k ?
1k ?
VIN
1k ?
1k ?
1k ?
Vcc
10k ?
1k ?
Vcc
10k ?
Vo1
Vo2
50k ?
1k ?
1k ?
VFB
20pF
100k ?
100k ?
1k ?
EN
10k ?
350k ?
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
11/14
2010.05 - Rev.A
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