参数资料
| 型号： | BD3506F-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 13/15页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ 2.5A 8SOIC |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 0.65 V ~ 2.5 V |
| 输入电压： | 1.2 V ~ 4.5 V |
| 电压 - 压降（标准）： | 0.12V @ 1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 2.5A（最小） |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
BD3506F,BD3506EFV
Technical Note
10. The present IC is a monolithic IC and has P isolation between elements to separate elements and a P substrate.
+
With this P layer and N layer of each element, PN junction is formed, and various parasitic elements are formed.
For example, when resistors and transistors are connected to terminals as illustrated below,
at the resistor, when GND>terminal A, and at transistor (NPN),
when GND>terminal B,PN junction works as a parasitic diode.
at the transistor (NPN), when GND>terminal B,the parasitic NPN transistor is operated
by the N-layer of other element adjacent to the parasitic diode.
The parasitic element is inevitably formed because of the IC construction. The operation of the parasitic element gives
rise to mutual interference between circuits and results in malfunction, and eventually, breakdown. Consequently, take
utmost care not to use the IC to operate the parasitic element such as applying voltage lower than GND (P substrate) to
the input terminal.
Resistor
NPN Transistor Structure (NPN)
(PIN A)
(PIN A)
(PIN B)
C
B
E
Parasitic diode
GND
GND
P+
P
P+
P+
N
P
P+
(PIN B)
N
N
N
N
N
N
B
C
P substrate
Parasitic diode
P substrate
E
GND
Parasitic diode
GND
Nearby other device
GND
Parasitic diode
● Power Dissipation
SOP8
7.0
HTSSOPB-20
5.0
6.0
5.0
4.0
② 5.90W
① 5.50 W
4.0
3.0
④ 3.20W
PCB ①： θ ja=125.0 ℃ /W
PCB ②： θ ja=86.2 ℃ /W
PCB ③： θ ja=54.3 ℃ /W
PCB ④： θ ja=39.1 ℃ /W
③ 2.30W
3.0
100 ℃
2.0
2.0
1.0
1.0
② 1.45W
① 1.00W
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature ：Ta(℃)
① Without heat sink
θ j-a=222 ℃ /W
② Mounted on board
70mm×70mm×1.6mm Glass-epoxy PCB
θ j-a=181 ℃ /W
Ambient Temperature ：Ta(℃)
measure ： TH-156(Kuwano-Denki)
measure condition ： Rohm Standard Board
PCB size ： 70mm×70mm×1.6mmt(PCB with Thermal Via)
PCB ①： Single-layer substrate
PCB ②： Double-layer substrate
(substrate surface copper foil area 15mm × 15mm)
PCB ③： Double-layer substrate
(substrate surface copper foil area 70mm × 70mm)
PCB ④： Fourth-layer substrate
(substrate surface copper foil area 70mm × 70mm)
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
13/14
2010.05 - Rev.A
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