参数资料
| 型号： | BD9139MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/22页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 3A 16VQFN |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.8 V ~ 3.3 V |
| 输入电压： | 2.7 V ~ 5.5 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 1MHz |
| 电流 - 输出： | 3A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | 16-VQFN（3x3） |
| 其它名称： | BD9139MUV-E2DKR |
BD9139MUV
Datasheet
● Consideration on Permissible Dissipation and Heat Generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
4 layers (Copper foil area : 5505mm )
①
P=I OUT × R ON
4.0
3.0
2.0
1.0
① 2.66W
② 1.77W
③ 0.62W
2
copper foil in each layers.
θ j-a=47.0 ℃ /W
② 4 layers (Copper foil area : 6.28m 2 )
copper foil in each layers.
θ j-a=70.62 ℃ /W
③ 4 layers (Copper foil area : 10.29m 2 )
θ j-a=201.6 ℃ /W
④ IC only.
θ j-a=462.9 ℃ /W
2
R ON =D × R ONP +(1-D)R ONN
D ： ON duty (=V OUT /V CC )
R ONH ： ON resistance of Highside MOS FET
R ONL ： ON resistance of Lowside MOS FET
I OUT ： Output current
④ 0.27W
0
0
25
50
75
100 105 125
150
P=3 × 0.0909 ＝ 0.8181[W]
Ambient temperature:Ta [ ℃ ]
Fig.27 Thermal derating curve
(VQFN016V3030)
If V CC =3.3V, V OUT =1.8V, R ONH =100m Ω , R ONL =80m Ω
I OUT =3A, for example,
D=V OUT /V CC =1.8/3.3=0.545
R ON =0.545 × 0.1+(1-0.545) × 0.08
=0.0545+0.0364
=0.0909[ Ω ]
2
As R ONH is greater than R ONL in this IC, the dissipation increases as the ON duty becomes greater.
consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
With the
www.rohm.com
?2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
12/20
TSZ02201-0J3J0AJ00170-1-2
02.MAR.2012 Rev.001
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