参数资料
| 型号： | BD9853AFV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 15/17页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 16-SSOP |
| 标准包装： | 1 |
| PWM 型： | 控制器 |
| 输出数： | 2 |
| 频率 - 最大： | 2MHz |
| 电源电压： | 4.5 V ~ 16 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 标准包装 |
| 产品目录页面： | 1373 (CN2011-ZH PDF) |
| 其它名称： | BD9853AFV-E2DKR |
BD9853AFV
Technical Note
12) IC pin input
This monolithic IC contains P+ isolation and PCB layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of
parasitic elements. For example, when a resistor and transistor are connected to pins as shown in following chart,
? the P/N junction functions as a parasitic diode
when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN).
? Similarly, when GND > (Pin B) for the transistor (NPN),
the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic
NPN transistor.
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result
of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will
trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (PCB) voltage to
input and output pins.
Resistance
Transistor (NPN)
(PinA)
(PinA)
(PinB)
Ｃ
Ｂ
Ｅ
Parasitic diode
Ｐ
＋
Ｐ
Ｐ
＋
Ｐ
＋
Ｎ
Ｐ
Ｐ
＋
ＧＮＤ
ＧＮＤ
(PinB)
Ｎ
Ｎ
P substrate
Ｎ
Ｎ
Ｎ
P substrate
Ｎ
Ｂ
Ｃ
Parasitic diode
ＧＮＤ
ＧＮＤ
Parasitic elementals
Ｅ
● Power Dissipation Reduction
1000
Other adiacent components
ＧＮＤ
Parasitic diode
800
600
400
200
0
※ IC mounted on a ROHM standard board
(70mm X 70mm X 1.6mm, glass epoxy)
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ： Ta( ℃ )
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
15/16
2009.05 - Rev.A
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