- 您现在的位置：买卖IC网 > PDF目录378411 > BF1206 (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1206 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 14/22页 |
| 文件大小： | 628K |
| 代理商： | BF1206 |
2003 Nov 17
14
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
handbook, halfpage
(
μ
A)
0
VG1-S (V)
0.5
1
2
0
80
1.5
60
40
20
MLE274
(6)
(7)
(3)
(4)
(2)
(1)
(5)
Fig.21 Gate 1 current as a function of gate 1
voltage; typical values; amplifier b.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
(mS)
0
10
ID(mA)
20
30
0
40
30
20
10
MLE275
(2)
(3)
(1)
(4)
(5)
(7)
(6)
Fig.22 Forward transfer admittance as a function
of drain current; typical values; amplifier b.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
0
16
8
0
10
50
20
30
40
MLE276
IG1 (
μ
A)
ID
(mA)
Fig.23 Drain current as a function of gate 1 current;
typical values; amplifier b.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
handbook, halfpage
0
5
0
4
8
1
ID
(mA)
VGG (V)
2
3
4
MLE277
Fig.24 Drain current as a function of gate 1 supply
voltage (V
GG
); typical values; amplifier b.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 150 k
GG
); see Fig.35.
相关PDF资料 |
PDF描述 |
|---|---|
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
发布紧急采购，3分钟左右您将得到回复。