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参数资料
| 型号： | BF1206 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 5/22页 |
| 文件大小： | 628K |
| 代理商： | BF1206 |
2003 Nov 17
5
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 18 mA; unless otherwise specified.
Notes
1.
2.
Calculated from measured s-parameters.
Measured in Fig.35 test circuit.
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
NF
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
33
38
2.4
3.2
1.1
15
3
1.3
1.6
35
48
2.9
30
1.9
2.2
mS
pF
pF
pF
fF
dB
dB
dB
dB
f = 11 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S opt
f = 800 MHz; Y
S
= Y
S opt
f = 200 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 0.5 mS; B
L
= B
L opt
; note 1
f = 400 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
; note 1
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
; note 1
input level for k = 1%; f
w
= 50 MHz;
f
unw
= 60 MHz; note 2
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
G
tr
power gain
30
dB
23
dB
X
mod
cross-modulation
90
102
92
105
dB
V
dB
V
dB
V
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| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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