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| 型号： | BF1206 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 6/22页 |
| 文件大小： | 628K |
| 代理商： | BF1206 |
2003 Nov 17
6
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
GRAPHS FOR AMPLIFIER a
handbook, halfpage
0
0.5
1
2
VG1-S (V)
ID
(mA)
0
10
20
1.5
MLE258
(7)
(6)
(5)
(4)
(1)
(2)
(3)
Fig.3
Transfer characteristics; typical values;
amplifier a.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
ID
(mA)
0
2
4
VDS (V)
6
24
8
0
16
MLE259
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Fig.4
Output characteristics; typical values;
amplifier a.
V
G2-S
= 4 V; T
j
= 25
C.
(1) V
G1-S
= 1.5 V.
(2) V
G1-S
= 1.4 V.
(3) V
G1-S
= 1.3 V.
(4) V
G1-S
= 1.2 V.
(5) V
G1-S
= 1.1 V.
(6) V
G1-S
= 1 V.
(7) V
G1-S
= 0.9 V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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