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参数资料
| 型号： | BF1208D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 10/22页 |
| 文件大小： | 253K |
| 代理商： | BF1208D |
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
10 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
8.1.2
Scattering parameters for amplifier A
8.1.3
Noise data for amplifier A
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V; I
D(A)
= 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
001aag360
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
Table 9.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
°
C; typical values.
f
(MHz)
Magnitude
(ratio)
(deg)
(ratio)
(deg)
40
0.992
3.037 3.21
177.04 0.00763
100
0.99152
7.62
3.13270
172.06 0.00182
200
0.98685
15.12 3.11006
164.12 0.00350
300
0.97979
22.49 3.06743
156.24 0.00511
400
0.97176
29.74 3.01634
148.56 0.00664
500
0.96209
36.76 2.95125
141.00 0.00805
600
0.95108
43.63 2.87828
133.56 0.00931
700
0.93915
50.35 2.79946
126.28 0.01042
800
0.92742
56.82 2.71508
119.20 0.01141
900
0.91573
62.95 2.62937
112.29 0.01224
1000
0.90429
68.83 2.54239
105.56 0.01297
Scattering parameters for amplifier A
s
11
s
21
Magnitude
s
12
Magnitude
(ratio)
s
22
Magnitude
(ratio)
0.992
0.99168
0.99047
0.98876
0.98662
0.98424
0.98168
0.97884
0.97630
0.97350
0.97115
Angle
Angle
Angle
(deg)
87.34
85.21
78.32
73.45
69.12
64.73
60.38
56.16
52.16
48.31
44.63
Angle
(deg)
1.139
2.93
5.83
8.72
11.57
14.39
17.21
19.97
22.68
25.42
28.14
Table 10.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
°
C; typical values;
unless otherwise specified.
f (MHz)
NF
min
(dB)
Γ
opt
(ratio)
400
0.9
0.77
800
1.1
0.73
Noise data for amplifier A
r
n
(ratio)
(deg)
22.7
45.75
0.65
0.62
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