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参数资料
| 型号： | BF1208D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 11/22页 |
| 文件大小： | 253K |
| 代理商： | BF1208D |
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
11 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
[1]
For the MOSFET not in use: V
G1-S(A)
= 0 V; V
DS(A)
= 0 V.
Calculated from S-parameters.
[2]
[3]
Measured in
Figure 34
test circuit.
Table 11.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 15 mA; unless otherwise specified.
Symbol Parameter
Conditions
|
y
fs
|
forward transfer admittance
f = 100 MHz; T
j
= 25
°
C
C
iss(G1)
input capacitance at gate1
f = 100 MHz
C
iss(G2)
input capacitance at gate2
f = 100 MHz
C
oss
output capacitance
f = 100 MHz
C
rss
reverse transfer capacitance
f = 100 MHz
G
tr
transducer power gain
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
Xmod
cross modulation
input level for k = 1 %; f
w
= 50 MHz; f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
Dynamic characteristics for amplifier B
[1]
Min
25
Typ
30
2.1
3.4
0.85
30
Max Unit
40
2.6
-
-
-
mS
pF
pF
pF
fF
[2]
-
[2]
-
[2]
-
[2]
-
31
28
26
-
-
-
35
32
30
3
1.1
1.4
39
36
34
-
1.7
2.0
dB
dB
dB
dB
dB
dB
[3]
90
-
-
102
-
90
98
105
-
-
-
-
dB
μ
V
dB
μ
V
dB
μ
V
dB
μ
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1208D T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208D,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF120F | 制造商:Eaton Corporation 功能描述:BF120F RELAY A |
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