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参数资料
| 型号： | BF1208D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 6/22页 |
| 文件大小： | 253K |
| 代理商： | BF1208D |
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
6 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
[1]
For the MOSFET not in use: V
G1-S(B)
= 0 V; V
DS(B)
= 0 V.
Calculated from S-parameters.
[2]
[3]
Measured in
Figure 33
test circuit.
8.1.1
Graphics for amplifier A
Xmod
cross modulation
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[3]
90
-
-
102
-
90
99
105
-
-
-
-
dB
μ
V
dB
μ
V
dB
μ
V
dB
μ
V
Table 8.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 19 mA; unless otherwise specified.
Symbol
Parameter
Conditions
Dynamic characteristics for amplifier A
[1]
…continued
Min
Typ
Max
Unit
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(A)
= 5 V; V
G1-S(B)
= V
DS(B)
= 0 V; T
j
= 25
°
C.
(1) V
G1-S(A)
= 1.8 V.
(2) V
G1-S(A)
= 1.7 V.
(3) V
G1-S(A)
= 1.6 V.
(4) V
G1-S(A)
= 1.5 V.
(5) V
G1-S(A)
= 1.4 V.
(6) V
G1-S(A)
= 1.3 V.
(7) V
G1-S(A)
= 1.2 V.
(8) V
G1-S(A)
= 1.1 V.
(9) V
G1-S(A)
= 1 V.
V
G2-S
= 4 V; V
G1-S(B)
= V
DS(B)
= 0 V; T
j
= 25
°
C.
Fig 5.
Amplifier A: output characteristics; typical
values
Fig 4.
Amplifier A: transfer characteristics; typical
values
V
G1-S
(V)
0
2
1.6
0.8
1.2
0.4
001aaa554
10
20
30
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(7)
(6)
001aaa555
V
DS
(V)
0
6
4
2
16
8
24
32
I
D
(mA)
0
(2)
(3)
(4)
(6)
(7)
(9)
(8)
(5)
(1)
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