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参数资料
| 型号： | BF1208D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 4/22页 |
| 文件大小： | 253K |
| 代理商： | BF1208D |
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
4 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
6.
Thermal characteristics
7.
Static characteristics
[1]
R
G1
connects gate1 (B) to V
GG
= 0 V (see
Figure 3
).
R
G1
connects gate1 (B) to V
GG
= 5 V (see
Figure 3
).
[2]
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
225
Unit
K/W
Table 7.
T
j
= 25
°
C; unless otherwise specified.
Symbol
Parameter
Per MOSFET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Conditions
Min
Typ
Max Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
μ
A
amplifier A
amplifier B
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
μ
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
μ
A
V
G2-S
= 4 V; V
DS(B)
= 5 V; R
G1
= 86 k
amplifier A; V
DS(A)
= 5 V
amplifier B
V
G2-S
= V
DS(A)
= 0 V
amplifier A; V
G1-S(A)
= 5 V; I
D(B)
= 0 A
amplifier B; V
G1-S(B)
= 5 V; V
DS(B)
= 0 V
V
G2-S
= 4 V; V
G1-S(B)
= 0 V;
V
G1-S(A)
= V
DS(A)
= V
DS(B)
= 0 V
6
6
6
6
0.5
0.5
0.3
0.4
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
[1]
14
-
-
24
20
mA
mA
[2]
10
I
G1-S
gate1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
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