参数资料
型号: BF1217WR
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封装: PLASTIC PACKAGE-4
文件页数: 10/17页
文件大小: 173K
代理商: BF1217WR
BF1217WR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2011
10 of 17
NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 19 mA.
Fig 13. Input admittance as a function of frequency;
typical values
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 19 mA.
Fig 14. Forward transfer admittance and phase as a
function of frequency; typical values
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 19 mA.
Fig 15. Reverse transfer admittance and phase as a
function of frequency; typical values
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 19 mA.
Fig 16. Output admittance as a function of frequency;
typical values
001aam166
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
g
is
, b
is
(mS)
10
2
b
is
g
is
f (MHz)
10
10
3
10
2
001aam167
10
10
2
|Y
fs
|
(mS)
1
10
10
2
fs
(deg)
1
|Y
fs
|
fs
001aam168
10
2
10
10
3
|Y
fs
|
(mS)
1
10
2
10
10
3
fs
(deg)
1
f (MHz)
10
10
3
10
2
|Y
fs
|
fs
001aam169
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
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