参数资料
型号: BF1217WR
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封装: PLASTIC PACKAGE-4
文件页数: 8/17页
文件大小: 173K
代理商: BF1217WR
BF1217WR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2011
8 of 17
NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
(1) R
G1
= 20 k
(2) R
G1
= 40 k
(3) R
G1
= 80 k
(4) R
G1
= 120 k
(5) R
G1
= 160 k
V
G2-S
= 4 V; T
j
= 25
C.
(1) V
GG
= 5.0 V
(2) V
GG
= 4.5 V
(3) V
GG
= 4.0 V
(4) V
GG
= 3.5 V
(5) V
GG
= 3.0 V
(6) V
GG
= 2.5 V
T
j
= 25
C; R
G1
= 82 k
(connected to V
GG
).
Fig 9.
Drain current as a function of gate2 voltage;
typical values
Fig 8.
Drain current as a function of V
DS
and V
GG
;
typical values
V
GG
= V
DS
(V)
0
5
4
2
3
1
001aam161
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
V
G2-S
(V)
0
5
4
2
3
1
001aam162
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
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