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参数资料
| 型号： | BF1217WR |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC PACKAGE-4 |
| 文件页数： | 2/17页 |
| 文件大小： | 173K |
| 代理商： | BF1217WR |
BF1217WR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2011
2 of 17
NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
P
tot
total power dissipation
y
fs
forward transfer admittance
[1]
T
sp
is the temperature at the soldering point of the source lead.
Calculated from S-parameters.
[2]
[3]
Measured in
Figure 17
test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
3. Ordering information
Table 3.
Type number
Quick reference data
Conditions
DC
DC
T
sp
107
C
f = 100 MHz; T
j
= 25
C;
I
D
= 18 mA
f = 100 MHz
Min
-
-
Typ
-
-
-
27
Max
6
30
180
38
Unit
V
mA
mW
mS
[1]
-
23
C
iss(G1)
C
rss
NF
input capacitance at gate1
reverse transfer capacitance f = 100 MHz
noise figure
[2]
-
2.5
20
1.0
1.5
107
-
-
-
-
-
pF
fF
dB
dB
dB
V
[2]
-
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 % at
40 dB AGC; f
w
= 50 MHz;
f
unw
= 60 MHz
-
-
Xmod
cross modulation
[3]
105
T
j
junction temperature
-
-
150
C
Discrete pinning
Description
source
drain
gate 2
gate 1
Simplified outline
Graphic symbol
2
1
4
3
001aam153
G1
G2
S
D
Ordering information
Package
Name Description
BF1217WR
-
Version
SOT343R
plastic surface-mounted package; reverse pinning; 4 leads
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1217WR,115 | 功能描述:MOSFET N-CH dual gate MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BF1217WR115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1218,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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