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| 型号： | BF1218 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1218<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 14/23页 |
| 文件大小： | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
14 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
(1) R
G1
= 47 k
.
(2) R
G1
= 56 k
.
(3) R
G1
= 68 k
.
(4) R
G1
= 82 k
.
(5) R
G1
= 86 k
.
(6) R
G1
= 100 k
.
(7) R
G1
= 120 k
.
(8) R
G1
= 150 k
.
(9) R
G1
= 180 k
.
V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
C; R
G1
is
connected to V
GG
; see
Figure 3
.
Fig 23. Amplifier B: drain current as a function of
gate1 supply voltage and drain supply voltage;
typical values
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
V
DS(B)
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
C;
R
G1
= 86 k
(connected to V
GG
); see
Figure 3
.
Fig 24. Amplifier B: drain current as a function of
gate2 voltage; typical values
V
GG
= V
DS
(V)
0
5
4
2
3
1
001aag367
10
15
5
20
25
I
D
(mA)
0
(1)
(4)
(5)
(6)
(7)
(8)
(9)
(3)
(2)
V
G2-S
(V)
0
6
4
2
001aag368
8
16
24
I
D
(mA)
0
(5)
(3)
(2)
(1)
(4)
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| BF1225 | 功能描述:EMI/RFI 抑制器及铁氧体 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 产品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流电流: 最大直流电阻: 工作温度范围:- 55 C to + 125 C 封装 / 箱体: 端接类型:SMD/SMT |
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