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| 型号： | BF1218 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1218<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 2/23页 |
| 文件大小： | 672K |
| 代理商： | BF1218 |
BF1218_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 14 April 2010
2 of 23
NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
P
tot
total power dissipation
y
fs
forward transfer admittance
[1]
T
sp
is the temperature at the soldering point of the source lead.
Calculated from S-parameters.
[2]
[3]
Measured in
Figure 33
test circuit.
[4]
Measured in
Figure 34
test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Quick reference data
Conditions
DC
DC
T
sp
109
C
f = 100 MHz; T
j
= 25
C
amplifier A; I
D
= 19 mA
amplifier B; I
D
= 15 mA
f = 100 MHz
amplifier A
amplifier B
Min
-
-
Typ
-
-
-
Max Unit
6
30
180
V
mA
mW
[1]
-
26
25
31
30
41
40
mS
mS
C
iss(G1)
input capacitance at gate1
[2]
-
2.1
2.1
20
2.6
2.6
-
pF
pF
fF
[2]
-
C
rss
NF
reverse transfer capacitance f = 100 MHz
noise figure
[2]
-
Y
S
= Y
S(opt)
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 %;
f
w
= 50 MHz;
f
unw
= 60 MHz
at 40 dB AGC
amplifier A
amplifier B
-
-
0.9
1.4
1.5
2.0
dB
dB
Xmod
cross modulation
[3]
102
105
105
-
-
-
150
dB
V
dB
V
C
[4]
102
-
T
j
junction temperature
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline
Graphic symbol
1
3
2
4
5
6
sym089
G1B
G1A
G2
S
DA
DB
AMP B
AMP A
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