参数资料
型号: BF861A
厂商: NXP Semiconductors N.V.
元件分类: JFETs
英文描述: N-channel FET
封装: BF861A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件页数: 7/14页
文件大小: 121K
代理商: BF861A
BF861A_BF861B_BF861C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 15 September 2011
7 of 14
NXP Semiconductors
BF861A; BF861B; BF861C
N-channel junction FETs
V
DS
= 8 V.
V
DS
= 8 V.
(1) V
GS
= 0 V.
(2) V
GS
=
200 mV.
(3) V
GS
=
400 mV.
(4) V
GS
=
600 mV.
(5) V
GS
=
800 mV.
(6) V
GS
=
1 V.
Fig 11. Typical output characteristics; BF861C.
Fig 10. Typical input characteristics; BF861C.
V
DS
= 8 V.
f = 1 MHz.
V
DS
= 8 V.
(1) I
D
= 10 mA.
(2) I
D
= 1 mA.
(3) I
D
= 0.1 mA.
(4) I
D
= I
GSS
.
Fig 13. Gate current as a function of drain-gate
voltage; typical values.
Fig 12. Input and reverse transfer capacitance as
functions of gate-source voltage; typical
values.
V
GS
(V)
2.5
0
0.5
1.5
1
2
mbd469
8
12
4
16
20
I
D
(mA)
0
V
DS
(V)
0
10
8
4
6
2
mbd470
8
12
4
16
20
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
V
GS
(V)
8
0
2
6
4
mbd471
4
6
2
8
10
C
is
, C
rs
(pF)
0
C
rs
C
is
mbd472
I
G
(nA)
10
2
10
4
10
3
10
1
10
1
10
2
10
5
V
DG
(V)
0
25
20
10
15
5
(1)
(2)
(3)
(4)
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PDF描述
BF861B N-channel FET
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相关代理商/技术参数
参数描述
BF861A T/R 功能描述:射频JFET晶体管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
BF861A,215 功能描述:射频JFET晶体管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
BF861A,215-CUT TAPE 制造商:NXP 功能描述:BF861A Series 25 V 6.5 mA 250 mW Surface Mount N-Channel Junction FETs-SOT-23-3
BF861B 制造商:PHILIPS-SEMI 功能描述:
BF861B,215 功能描述:射频JFET晶体管 JFET N-CH 25V 10MA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel