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参数资料
| 型号： | BFR106 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封装： | BFR106/C<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,;BFR106<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 200 |
| 文件页数： | 2/10页 |
| 文件大小： | 206K |
| 代理商： | BFR106 |
September 1995
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
base
emitter
collector
1
2
3
Fig.1 SOT23.
lfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
80
5
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
20
15
100
500
V
V
mA
mW
up to T
s
= 70
C; note 1
I
C
= 50 mA; V
CE
= 9 V; T
amb
= 25
C
I
C
= 50 mA; V
CE
= 9 V; f = 500 MHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
I
C
= 50 mA; V
CE
= 9 V; R
L
= 75
;
T
amb
= 25
C; d
im
=
60 dB;
f
(p
q
r)
= 793.25 MHz
GHz
G
UM
maximum unilateral power gain
11.5
dB
V
o
output voltage
350
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
20
15
3
100
500
150
175
V
V
V
mA
mW
C
C
up to T
s
= 70
C; note 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BFR106,215 | 功能描述:射频双极小信号晶体管 NPN 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR106,215-CUT TAPE | 制造商:NXP 功能描述:BFR106 Series 9 V 500 mW 5 GHz Wideband NPN Transistor - SOT23 |
| BFR106 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR106/T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFR106_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
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