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参数资料
| 型号： | BFR106 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封装： | BFR106/C<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,;BFR106<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 200 |
| 文件页数： | 3/10页 |
| 文件大小： | 206K |
| 代理商： | BFR106 |
September 1995
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
1
S
22
–
2.
I
C
= 30 mA; V
CE
= 6 V; R
L
= 75
; T
amb
= 25
C;
f
(p
q)
= 810 MHz; V
o
= 100 mV.
d
im
=
60 dB (DIN 45004B); I
C
= 50 mA; V
CE
= 9 V; R
L
= 75
; T
amb
= 25
C; f
(p
q
r)
= 793.25 MHz.
3.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 70
C; note 1
210 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
80
5
MAX.
UNIT
I
CBO
h
FE
f
T
collector cut-off current
DC current gain
transition frequency
I
E
= 0; V
CB
= 10 V
I
C
= 50 mA; V
CE
= 9 V
I
C
= 50 mA; V
CE
= 9 V; f = 500 MHz;
T
amb
= 25
C
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 6 V; f = 800 MHz;
T
amb
= 25
C
note 2
100
nA
GHz
C
c
C
e
C
re
G
UM
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
1.5
4.5
1.2
11.5
pF
pF
pF
dB
F
3.5
dB
d
2
second order intermodulation
distortion
output voltage
50
dB
V
o
note 3
350
mV
G
UM
10 log
2
----------------------------------------------------------
dB.
=
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BFR106,215 | 功能描述:射频双极小信号晶体管 NPN 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR106,215-CUT TAPE | 制造商:NXP 功能描述:BFR106 Series 9 V 500 mW 5 GHz Wideband NPN Transistor - SOT23 |
| BFR106 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR106/T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFR106_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
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