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参数资料
| 型号： | BFR520 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFR520<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR520<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件页数： | 3/14页 |
| 文件大小： | 163K |
| 代理商： | BFR520 |
BFR520
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 13 September 2011
3 of 14
NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CES
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current (DC)
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6.
Symbol Parameter
R
th(j-s)
thermal resistance from junction to soldering point
[1]
T
sp
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7.
T
j
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
collector cut-off
current
h
FE
DC current gain I
C
= 20 mA; V
CE
= 6 V
C
e
emitter
capacitance
C
c
collector
capacitance
C
re
feedback
capacitance
f
T
transition
frequency
G
UM
maximum
unilateral power
gain
Limiting values
Conditions
open emitter
R
BE
= 0
open collector
Min
-
-
-
-
Max
20
15
2.5
70
300
150
175
Unit
V
V
V
mA
mW
C
C
up to T
sp
= 97
C
[1]
-
65
-
Thermal characteristics
Conditions
Typ
Unit
K/W
[1]
260
Characteristics
Conditions
I
E
= 0 A; V
CB
= 6 V
Min
-
Typ
-
Max
50
Unit
nA
60
-
120
1
250
-
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
E
= i
e
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V;
f = 1 GHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
C
f = 900 MHz
f = 2 GHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
pF
-
0.5
-
pF
-
0.4
-
pF
-
9
-
GHz
[1]
-
-
13
15
9
14
-
-
-
dB
dB
dB
s
21
2
insertion power
gain
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相关代理商/技术参数 |
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| BFR520,215 | 功能描述:射频双极小信号晶体管 NPN 70MA 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR520,215-CUT TAPE | 制造商:NXP 功能描述:BFR520 Series 15 V 300 mW 9 GHz SMT NPN Wideband Transistor - SOT-23-3 |
| BFR520,235 | 功能描述:射频双极小信号晶体管 Single NPN 15V 70mA 300mW 60 9GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR520 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR520.215 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package |
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