参数资料
型号: BFR93AR
厂商: NXP Semiconductors N.V.
元件分类: 晶体管
英文描述: NPN 6 GHz wideband transistor
封装: BFR93AR<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR93AR/A2<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-
文件页数: 12/13页
文件大小: 88K
代理商: BFR93AR
BFR93AR_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
12 of 13
NXP Semiconductors
BFR93AR
NPN 6 GHz wideband transistor
11. Legal information
11.1
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
.
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相关代理商/技术参数
参数描述
BFR93AR T/R 功能描述:射频双极小信号晶体管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
BFR93AR,215 功能描述:射频双极小信号晶体管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
BFR93AR-GS08 制造商:Vishay Semiconductors 功能描述:TRANS GP BJT NPN 12V 0.05A 3PIN SOT-23 - Tape and Reel
BFR93AR-T1 制造商:未知厂家 制造商全称:未知厂家 功能描述:The RF Line NPN Silicon High-Frequency Transistor
BFR93AR-T3 制造商:未知厂家 制造商全称:未知厂家 功能描述:The RF Line NPN Silicon High-Frequency Transistor