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参数资料
| 型号： | BFS540 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFS540<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件页数： | 2/13页 |
| 文件大小： | 273K |
| 代理商： | BFS540 |
2000 May 30
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 package.
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT323.
handbook, 2 columns
3
1
2
MBC870
Top view
Marking code:
N4.
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
TYP.
120
9
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
20
15
120
500
250
V
V
mA
mW
T
s
80
C; note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
GHz
G
UM
maximum unilateral power gain
14
dB
F
noise figure
1.3
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R
BE
= 0
open collector
20
15
2.5
120
500
150
175
V
V
V
mA
mW
C
C
T
s
80
C; note 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BFS540 T/R | 功能描述:射频双极小信号晶体管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFS540,115 | 功能描述:射频双极小信号晶体管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFS540_00 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN 9 GHz wideband transistor |
| BFS540115 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 15V 9GHZ |
| BFS540-115 (N4) | 制造商:NXP Semiconductors 功能描述:Bulk |
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