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| 型号： | BLF6G10LS-200R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件页数： | 2/10页 |
| 文件大小： | 98K |
| 代理商： | BLF6G10LS-200R |
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 January 2008
Document identifier: BLF6G10LS-200R_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
相关PDF资料 |
PDF描述 |
|---|---|
| BLF6G10LS-200 | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF872 | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| BLH2-21-35PC-1 | MIL SERIES CONNECTOR, RECEPTACLE |
| BLH2-21-39PN-1 | MIL SERIES CONNECTOR, RECEPTACLE |
| BLH2-23-21PK-1 | MIL SERIES CONNECTOR, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BLF6G10LS-200R /T3 | 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BLF6G10LS-200R,112 | 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BLF6G10LS-200R,118 | 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BLF6G10LS-200RN | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin LDMOST 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin SOT-502B |
| BLF6G10LS-200RN,11 | 功能描述:射频MOSFET电源晶体管 Trans MOSFET N-CH 65V 49A 2-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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