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参数资料
型号： BLF6G10LS-200R
厂商： NXP SEMICONDUCTORS
元件分类： 功率晶体管
英文描述： Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： ROHS COMPLIANT, CERAMIC PACKAGE-2
文件页数： 4/10页
文件大小： 98K
代理商： BLF6G10LS-200R
BLF6G10LS-200R_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
3 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200R is an enhanced rugged device and is capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 1400 mA; PL = 200 W; f = 894 MHz.
Table 6.
Characteristics
Tj = 25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID = 0.9 mA
65
-
V
VGS(th)
gate-source threshold voltage
VDS =10V;ID = 270 mA
1.4
2.0
2.4
V
VGSq
gate-source quiescent voltage
VDS = 28 V;
ID = 1620 mA
1.7
2.2
2.7
V
IDSS
drain leakage current
VGS =0V; VDS =28V
-
4.2
A
IDSX
drain cut-off current
VGS =VGS(th) + 3.75 V;
VDS =10V
40
48
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
420
nA
gfs
forward transconductance
VDS =10V; ID = 9.45 A
11
18
26
S
RDS(on)
drain-source on-state
resistance
VGS =VGS(th) + 3.75 V;
ID = 9.45 A
0.012
0.07
0.093
Crs
feedback capacitance
VGS =0V; VDS =28V;
f= 1MHz
-3
-pF
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz;
RF performance at VDS =28V; IDq = 1400 mA; Tcase =25 °C; unless otherwise specied; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PL(AV)
average output power
-
40
-
W
Gp
power gain
PL(AV) = 40 W
19
20
21
dB
IRL
input return loss
PL(AV) = 40 W
-
6.7
5.0
dB
ηD
drain efciency
PL(AV) = 40 W
25
27.5
-
%
ACPR
adjacent channel power ratio
PL(AV) = 40 W
-
40.5 38.0 dBc
相关PDF资料
PDF描述
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872 UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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相关代理商/技术参数
参数描述
BLF6G10LS-200R /T3 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
BLF6G10LS-200R,112 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
BLF6G10LS-200R,118 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
BLF6G10LS-200RN 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin LDMOST 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin SOT-502B
BLF6G10LS-200RN,11 功能描述:射频MOSFET电源晶体管 Trans MOSFET N-CH 65V 49A 2-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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