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参数资料
| 型号： | BLF6G10LS-200R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件页数： | 7/10页 |
| 文件大小： | 98K |
| 代理商： | BLF6G10LS-200R |
BLF6G10LS-200R_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
6 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
ε
r = 3.5 and
thickness = 0.76 mm.
See Table 8 for list of components.
The drawing is not to scale.
Fig 7.
Component layout
001aah524
NXP
OUT
800 -1000 MHz
V1.0
C7
NXP
IN
800 -1000 MHz
V1.0
C8
C11 C13
C17
C5
Q1
C6
C18
C15
C16
R3
L1
C14
C12
C10
C9
R2
C2
C1
C3
R1
Table 8.
All capacitors should be soldered vertically except C20.
Component
Description
Value
Remarks
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor
68 pF
solder vertically
C2
multilayer ceramic chip capacitor
13 pF
solder vertically
C5, C6
multilayer ceramic chip capacitor
10 pF
solder vertically
C7, C8, C9, C10
Electrolytic capacitor
220 nF
Vishay VJ1206Y224KXB
C13, C14
multilayer ceramic chip capacitor
4.7
F; 50 V [2]
C15
multilayer ceramic chip capacitor
1.5 pF
solder vertically
C17, C18
Electrolytic capacitor
220
F; 63 V
L1
Ferrite SMD bead
-
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
Q1
BLF6G10LS-200R
-
R1, R2, R3
SMD resistor
9.1
; 0.1 W
相关PDF资料 |
PDF描述 |
|---|---|
| BLF6G10LS-200 | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF872 | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| BLH2-21-35PC-1 | MIL SERIES CONNECTOR, RECEPTACLE |
| BLH2-21-39PN-1 | MIL SERIES CONNECTOR, RECEPTACLE |
| BLH2-23-21PK-1 | MIL SERIES CONNECTOR, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BLF6G10LS-200R /T3 | 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BLF6G10LS-200R,112 | 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BLF6G10LS-200R,118 | 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BLF6G10LS-200RN | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin LDMOST 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin SOT-502B |
| BLF6G10LS-200RN,11 | 功能描述:射频MOSFET电源晶体管 Trans MOSFET N-CH 65V 49A 2-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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