参数资料
型号: BLF6G10LS-200R
厂商: NXP SEMICONDUCTORS
元件分类: 功率晶体管
英文描述: Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, CERAMIC PACKAGE-2
文件页数: 9/10页
文件大小: 98K
代理商: BLF6G10LS-200R
BLF6G10LS-200R_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
8 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 9.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CDMA
Code Division Multiple Access
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G10LS-200R_1
20080121
Preliminary data sheet
-
相关PDF资料
PDF描述
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872 UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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相关代理商/技术参数
参数描述
BLF6G10LS-200R /T3 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
BLF6G10LS-200R,112 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
BLF6G10LS-200R,118 功能描述:射频MOSFET电源晶体管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
BLF6G10LS-200RN 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin LDMOST 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 65V 49A 3-Pin SOT-502B
BLF6G10LS-200RN,11 功能描述:射频MOSFET电源晶体管 Trans MOSFET N-CH 65V 49A 2-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray