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参数资料
| 型号： | BR24S256F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 10/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 100KHZ SOP8 |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
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BR24L □□ -W Series,BR24S □□□ -W Series
Technical Note
● Write Command
○ Write cycle
? Arbitrary data is written to EEPROM. When to write only 1 byte, byte write is normally used, and when to write continuous
data of 2 bytes or more, simultaneous write is possible by page write cycle. The maximum number of write bytes is
specified per device of each capacity. Up to 32 arbitrary bytes can be written. (In the case of BR24L32 / L64-W)
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
WORD
ADDRESS
DATA
O
P
SDA
*1 As for WA7, BR24L01A-W becomes Don’t care.
LINE
1 0 1 0 A2 A1 A0
Note)
WA
7
R A *1
/ C
WA
0
A
C
D7
D0
A
C
W K
K
K
Fig.36 Byte write cycle (BR24L01A/02/04/08/16-W)
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
1st WORD
ADDRESS
2nd WORD
ADDRESS
DATA
O
P
SDA
LINE
1 0 1 0 A2 A1 A0
*
*
*
WA WA
12 11
WA
0
D7
D0
*1 As for WA12, BR24L32-W becomes Don’t care.
Note)
R A
/ C
W K
*1
A
C
K
A
C
K
A
C
K
Fig.37 Byte write cycle (BR24L32/64-W)
S
W
T
A
R
I
S
T
SDA
L IN E
R
T
SLAVE
ADDRESS
1 0 1 0 A 2 A 1 A 0
T
E
WA
7
W ORD
A D D R E S S (n )
WA
0
D7
D A TA (n )
D0
*2
D A TA (n +1 5 )
D0
O
P
*1 As for WA7, BR24L01A-W becomes Don’t care.
*2 As for BR24L01A/02-W becomes (n+7).
R A
A
A
A
N o te )
/ C *1
W K
C
K
C
K
C
K
Fig.38 Page write cycle (BR24L01A/02/04/08/16-W)
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
1 st W O R D
A D D R E S S (n )
2nd W ORD
A D D R E S S (n )
D A T A (n )
D A TA (n + 3 1 )
O
P
SDA
L IN E
1 0 1 0 A 2 A 1 A 0
*
*
*
WA WA
1 2 11
WA
0
D7
D0
D0
*1 As for WA12, BR24L32-W becomes Don’t care.
N ote )
R A
/ C
W K
*1
A
C
K
A
C
K
A
C
K
A
C
K
Fig.39 Page write cycle (BR24L32/64-W)
? Data is written to the address designated by word address (n-th address)
? By issuing stop bit after 8bit data input, write to memory cell inside starts.
? When internal write is started, command is not accepted for tWR (5ms at maximum).
? By page write cycle, the following can be written in bulk : Up to 8 bytes ( BR24L01A-W, BR24L02-W)
: Up to 16bytes (BR24L04-W, BR24L08-W,BR24L16-W)
: Up to 32bytes (BR24L32-W, BR24L64-W)
And when data of the maximum bytes or higher is sent, data from the first byte is overwritten.
(Refer to "Internal address increment" of "Notes on page write cycle" in P9/32.)
? As for page write cycle of BR24L01A-W and BR24L02-W, after the significant 5 bits (4 significant bits in BR24L01-W) of
word address are designated arbitrarily, and as for page write command of BR24L04-W, BR24L08-W, and BR24L16-W,
after page select bit (PS) of slave address is designated arbitrarily, by continuing data input of 2 bytes or more, the
address of insignificant 4 bits (insignificant 3 bit in BR24L01A-W, and BR24L02-W) is incremented internally, and data
up to 16 bytes (up to 8 bytes in BR24L01A-W and BR24L02-W) can be written.
? As for page write cycle of BR24L32-W and BR24L64-W, after the significant 7 bits (in the case of BR24L32-W) of word
address, or the significant 8 bits (in the case of BR24L64-W) of word address are designated arbitrarily, by continuing data
input of 2 byte or more, the address of insignificant 5 bits is incremented internally, and data up to 32 bytes can be written.
Note)
*1 In BR24L16-W, A2 becomes P2.
*1 *2 *3
1 0 1 0 A 2 A 1 A 0
*2 In BR24L08-W, BR24L16-W, A1 becomes P1.
*3 In BR24L04-W, A0 becomes PS, and in BR24L08-W and BR24L16-W, A0 becomes P0.
Fig.40 Difference of slave address of each type
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
10/40
2009.09 - Rev.D
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| BR24S32FJ-WE2 | 功能描述:电可擦除可编程只读存储器 IC 电可擦除可编程只读存储器 32KBIT 400KHZ RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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