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参数资料
| 型号： | BR34E02FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SPD 2KB I2C 8TSSOP |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
Memory for Plug & Play
DDR/DDR2
(For memory module) SPD Memory
BR34E02FVT-W,BR34E02NUX-W
● Description
BR34E02FVT-W is 256 × 8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
● Features
1) 256 × 8 bit architecture serial EEPROM
2) Wide operating voltage range: 1.7V-3.6V
3) Two-wire serial interface
4) High reliability connection using Au pads and Au wires
5) Self-Timed Erase and Write Cycle
6) Page Write Function (16byte)
7) Write Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 (Onetime Rom) : 00h-7Fh
Write Protect 2 (Hardwire WP PIN) : 00h-FFh
8) Low Power consumption
Write (at 1.7V ) : 0.4mA (typ.)
Read (at 1.7V ) : 0.1mA(typ.)
Standby ( at 1.7V ) : 0.1μA(typ.)
9) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low V CC
10) Compact package: TSSOP-B8, VSON008X2030
11) High reliability fine pattern CMOS technology
12) Rewriting possible up to 1,000,000 times
13) Data retention: 40 years
14) Noise reduction Filtered inputs in SCL / SDA
15) Initial data FFh at all addresses
● BR34E02-W Series
No.09002EBT03
Capacity
2Kbit
Bit format
256X8
Type
BR34E02-W
Power Source Voltage
1.7V ～ 3.6V
TSSOP-B8
●
VSON008X2030
●
● Absolute Maximum Ratings (Ta=25 ℃ )
Parameter
Supply Voltage
Symbol
V CC
Rating
-0.3 ～ +6.5
Unit
V
Power Dissipation
Storage Temperature
Operating Temperature
Terminal Voltage (A0)
Terminal Voltage (etcetera)
Pd
Tstg
Topr
-
-
330(BR34E02FVT-W)
300(BR34E02NUX-W)
-65 ～ +125
-40 ～ +85
-0.3 ～ 10.0
-0.3 ～ V CC +0.3
*1
*2
mW
℃
℃
V
V
* Reduce by 3.3mW(*1), 3.0 mW(*2)/ ? C over 25 ? C
● Recommended operating conditions
Parameter
Supply Voltage
Input Voltage
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
Symbol
V CC
Ｖ IN
1/18
Rating
1.7 ～ 3.6
0 ～ V CC
Unit
V
V
2009.09 - Rev.B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR34E02FVT-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR/DDR2 (For memory module) SPD Memory |
| BR34E02NUX-3E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Serial EEPROM Series Standard EEPROM Plug & Play EEPROM |
| BR34E02NUX-3TR | 制造商:ROHM 制造商全称:Rohm 功能描述:Serial EEPROM Series Standard EEPROM Plug & Play EEPROM |
| BR34E02NUX-W | 制造商:ROHM Semiconductor 功能描述: |
| BR34E02NUX-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR/DDR2 (For memory module) SPD Memory |
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