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参数资料
| 型号： | BR34E02FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SPD 2KB I2C 8TSSOP |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
BR34E02FVT-W, BR34E02NUX-W
Technical Note
The open drain interface is recommended for the SDA port in the I C BUS. However, if the Tri-state CMOS interface is
● Microcontroller connection
○ Concerning Rs
2
applied to SDA, insert a series resistor (Rs) between the SDA pin of the device and the pull up resistor R PU is
recommended, since it will serve to limit the current between the PMOS of the microcontroller, and the NMOS of the
EEPROM. Rs also protects the SDA pin from surges. Therefore, Rs is able to be used though open drain inout of the
SDA port.
ACK
R PU
R S
SCL
SDA
'H'OUTPUT OF
CONTROLLER
“L” OUTPUT OF EEPROM
CONTROLLER
EEPROM
The “H” output of controller and the “L” output of
EEPROM may cause current overload to SDA line.
Fig.44 I/O Circuit
Fig.45 Input/Output Collision Timing
Rs Maximum
The maximum value of Rs is determined by following factors.
① SDA rise time determined by R PU and the capacitance value of the BUS line (CBUS) of SDA must be less than tR. In
addition, the other timings must be within the timing conditions of the AC.
② When the output from SDA is Low, the voltage of the BUS at A is determined by R PU, and Rs must be lower than the
input Low level of the microcontroller, including recommended noise margin (0.1V CC ).
V CC
R PU
A
(V CC -V OL )×R S
R PU +R S
+
V OL +0.1V CC ≦ V IL
R S
I OL
V OL
∴
R S
≦
V IL -V OL -0.1V CC
1.1V CC -V IL
×
R PU
BUS
CAPACITANCE
Examples : When V CC =3V V IL =0.3V CC V OL =0.4V R PU =20k ?
V IL
CONTROLLER
EEPROM
According to ② R S
≦
0.3×3-0.4-0.1×3
1.1×3-0.3×3
×
20×10 3
Fig.46 I/O Circuit
≦ 1.67 ［ k ? ］
Rs Minimum
The minimum value of Rs is determined by the current overload during BUS conflict.
Current overload may cause noises in the power line and instantaneous power down.
The following conditions must be met, where “I” is the maximum permissible current, which depends on the Vcc line
impedance as well as other factors. “I” current must be less than 10mA for EEPROM.
Vcc
R S
≦
I
R PU
R S
"L" OUTPUT
∴ R S ≧
Vcc
I
MAXIMUM
Examples: When V CC =3V, I=10mA
"H" OUTPUT
CURRENT
R S ≧
3
10×10 -3
CONTROLLER
EEPROM
≧ 300 ［ ? ］
Fig.47 I/O Circuit
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
14/18
2009.09 - Rev.B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR34E02FVT-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR/DDR2 (For memory module) SPD Memory |
| BR34E02NUX-3E2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Serial EEPROM Series Standard EEPROM Plug & Play EEPROM |
| BR34E02NUX-3TR | 制造商:ROHM 制造商全称:Rohm 功能描述:Serial EEPROM Series Standard EEPROM Plug & Play EEPROM |
| BR34E02NUX-W | 制造商:ROHM Semiconductor 功能描述: |
| BR34E02NUX-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR/DDR2 (For memory module) SPD Memory |
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