参数资料
型号: BR25S128FV-WE2
厂商: Rohm Semiconductor
文件页数: 1/19页
文件大小: 0K
描述: IC EEPROM SPI 128KB 20MHZ 8-SSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 128K (16K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-LSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-SSOPB
包装: 标准包装
其它名称: BR25S128FV-WE2DKR
High Reliability Series Serial EEPROMs
SPI BUS
BR25 □□□□ family
BR25S □□□ Series
● Description
BR25S □□□ series is a serial EEPROM of SPI BUS interface method.
● Features
1) High speed clock action up to 20MHz (Max.)
2) Wait function by HOLDB terminal
3) Part or whole of memory arrays settable as read only memory area by program
4) 1.7 ~ 5.5V single power source action most suitable for battery use
5) Page write mode useful for initial value write at factory shipment
6) Highly reliable connection by Au pad and Au wire
7) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
8) Auto erase and auto end function at data rewrite
9) Low current consumption
At write action (5V) : 1.5mA (Typ.)
At read action (5V) : 1.0mA (Typ.)
At standby action (5V) : 0.1 μ A (Typ.)
10) Address auto increment function at read action
11) Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WPB pin
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage
12) SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J/VSON008X2030 Package
13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
14) Data kept for 40 years
15) Data rewrite up to 1,000,000 times
● Page Write
No.10001EBT08
Page
Part Number
● BR25S □□□ series
32Byte
BR25S320-W
BR25S640-W
64Byte
BR25S128-W
BR25S256-W
Capacity Bit format
Power source
voltage
SOP8
SOP-J8
SSOP-B8 TSSOP-B8 MSOP8
TSSOP-B8J
VSON008
X2030
32Kbit
64Kbit
4K × 8
8K × 8
1.7V ~ 5.5V
1.7V ~ 5.5V
128Kbit
256Kbit
16K × 8
32K × 8
1.7V ~ 5.5V
1.7V ~ 5.5V
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
1/18
2010.12 - Rev.B
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