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参数资料
| 型号： | BR25S128FV-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 9/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SPI 128KB 20MHZ 8-SSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-LSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SSOPB |
| 包装： | 标准包装 |
| 其它名称： | BR25S128FV-WE2DKR |
BR25S □□□ Series
3. Write command (WRITE)
Technical Note
CSB
～～
～～
～～
Product
number
Address
length
SCK
0
1
2
3
4
5
6
7
8
9
10
11 ～ ～
23
24
30
31
BR25S320-W
A11-A0
SI
0
0
0
0
0
0
1
0
*
A14
A13
～～
A12 ～ ～
A1
A0
D7
D6
～～
～～
D2
D1
D0
BR25S640-W
A12-A0
SO
High-Z
～～
＊ =Don't Care
BR25S128-W
BR25S256-W
A13-A0
A14-A0
Fig.36
Write command
By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data
after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time
of tE/W (Max 5ms). During tE/W, other than read status register command is not accepted. Set CSB HIGH between
taking the last data (D0) and rising the next SCK clock. At the other timing, write command is not executed, and this write
command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input
without setting CSB HIGH, 2byte or more data can be written for one tE/W. The maximum number of write bytes is
specified per device of each capacity. Up to 64 arbitrary bytes can be written (in the case of BR25S128/256-W). In page
write, the insignificant 5 bit of the designated address is incremented internally at every time when data of 1 byte is input
and data is written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and
previously input data is overwritten.
4. Write status register, Read status register command (WRSR/RDSR)
CSB
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
SI
0
0
0
0
0
0
0
1
WPEN
*
*
*
BP1 BP0
*
*
SO
High-Z
*=Don't care
Fig.37
Write status register
Write status register command can write data of status register. The data can be written by this command are 3 bits, that
is, WPEN(bit7), BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of
EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data.
Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise,
set CSB HIGH between taking the last data bit (bit0) and the next SCK clock rising. At the other timing, command is
cancelled. Write disable block is determined by BP1 BP0, and the block can be selected from 1/4 , 1/2, and entire of
memory array (Refer to the write disable block setting table.). To the write disabled block, write cannot be made, and only
read can be made.
CSB
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SI
SO
0
High-Z
0
0
0
0
1
0
1
bit7
WPEN
bit6
0
bit5
0
bit4
0
bit3
bit2
bit1
bit0
BP1 BP0 WEN R/B
Fig.38
Read status register command
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
9/18
2010.12 - Rev.B
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