参数资料
型号: BR93L56FVT-WE2
厂商: Rohm Semiconductor
文件页数: 16/41页
文件大小: 0K
描述: IC EEPROM 2KBIT 2MHZ 8TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (128 x 16)
速度: 2MHz
接口: Microwire 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP-B
包装: 标准包装
产品目录页面: 1380 (CN2011-ZH PDF)
其它名称: BR93L56FVT-WE2DKR
BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
3) Equivalent circuit
Technical Note
Output circuit
Input citcuit
RESET int.
OEint.
Fig.71 Output circuit (DO)
DO
CS
Fig.72 Input circuit (CS)
CSint.
Input circuit
CS int.
Input circuit
CS int.
DI
Fig.73 Input circuit (DI)
SK
Fig.74 Input circuit (SK)
4) I/O peripheral circuit
4-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○ Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an
appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
Rpd ≧
VOHM
IOHM
???①
Microcontroller
EEPROM
VOHM ≧
VIHE
???②
Example) When V CC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
VOHM
VIHE
from the equation ① ,
2 × 10
“H” output
IOHM
Rpd
“L” input
Rpd ≧
2.4
-3
Rpd ≧
1.2 [k Ω ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
Fig.75 CS pull down resistance
? VIHE
: EEPROM VIH specifications
? VOHM : Microcontroller VOH specifications
? IOHM
: Microcontroller IOH specifications
4-2) DO is available in both pull up and pull down.
Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to
pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN.
If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this
as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such
output, pull up DO pin for improvement.
CS
SK
Enlarged
CS “H”
SK
DI
D0
DI
DO
High-Z
READY
DO BUSY
High-Z
CS=SK=DI=”H”
When DO=OPEN
BUSY
Improvement by DO pull up
DO
BUSY
READY
CS=SK=DI=”H”
When DO=pull up
Fig.76 READY output timing at DO=OPEN
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
16/40
2011.09 - Rev.G
相关PDF资料
PDF描述
EP4CGX15BF14C8 IC CYCLONE IV FPGA 15K 169 FBGA
AGLN250V2-ZVQG100I IC FPGA NANO 1KB 250K 100VQFP
AGLN250V2-VQG100I IC FPGA NANO 1KB 250K 100VQFP
BR24L16-W IC EEPROM 16KBIT 400KHZ 8DIP
AGLN250V2-VQ100I IC FPGA NANO 1KB 250K 100VQFP
相关代理商/技术参数
参数描述
BR93L56FV-W 制造商:ROHM Semiconductor 功能描述:EEPROM,2kb,128Wx16b,Microwire Bus,SSOP8
BR93L56FV-WE2 功能描述:电可擦除可编程只读存储器 SRL 128X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
BR93L56F-W 制造商:ROHM Semiconductor 功能描述:IC,Memory,EEPROM,Serial SOP8 128x16 SER
BR93L56F-WE2 功能描述:电可擦除可编程只读存储器 SRL 128X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
BR93L56RF 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM