参数资料
型号: BR93L56FVT-WE2
厂商: Rohm Semiconductor
文件页数: 31/41页
文件大小: 0K
描述: IC EEPROM 2KBIT 2MHZ 8TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (128 x 16)
速度: 2MHz
接口: Microwire 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP-B
包装: 标准包装
产品目录页面: 1380 (CN2011-ZH PDF)
其它名称: BR93L56FVT-WE2DKR
BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
2) Equivalent circuit
○ Output circuit
DO
OEint.
Fig.36 Output circuit (DO)
○ Input circuit
Technical Note
RESET int.
TEST1
(TEST)
TESTint.
CS
LPF
CSint.
EN
Fig.37 Input circuit (CS)
Fig.38
Input circuit (TEST1, TEST)
EN
TEST2
3)
SK
DI
Fig.39
I/O peripheral circuit
Input circuit (SK, DI)
LPF
SK(DI)int.
Fig.40 Input circuit (TEST2)
3-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
Refer to the item 6) Notes at power ON/OFF in page 34/35.
○ Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary.
Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
Rpd ≧
VOHM
IOHM
???①
Microcontroller
EEPROM
VOHM ≧
VIHE
???②
Example) When V CC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
VOHM
VIHE
from the equation ① ,
2 × 10
“H” output
IOHM
Rpd
“L” input
Rpd ≧
2.4
-3
Rpd ≧
1.2 [k Ω ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
Fig.41 CS pull down resistance
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
31/40
? VIHE
? VOHM
? IOHM
: EEPROM VIH specifications
: Microcontroller VOH specifications
:Microcontroller IOH specifications
2011.09 - Rev.G
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